DMB54D0UDW Diodes, Inc., DMB54D0UDW Datasheet

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DMB54D0UDW

Manufacturer Part Number
DMB54D0UDW
Description
N-channel Enhancement Mode Mosfet Plus Pnp Transistor
Manufacturer
Diodes, Inc.
Datasheet

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Part Number:
DMB54D0UDW-7
Manufacturer:
DIODES
Quantity:
310
Maximum Ratings – MOSFET, Q1
Maximum Ratings - PNP Transistor, Q2
Thermal Characteristics, Total Device
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Features
Notes:
DMB54D0UDW
Document number: DS31677 Rev. 3 - 2
N-Channel MOSFET and PNP Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Characteristic
ESD protected gate up to 2kV
Continuous
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
@T
A
= 25°C unless otherwise specified
@T
@T
www.diodes.com
A
A
= 25°C unless otherwise specified
2
= 25°C unless otherwise specified
SOT-363
TOP VIEW
)
1 of 6
Mechanical Data
Symbol
Symbol
Symbol
T
J
V
V
V
V
V
R
, T
I
P
GSS
CBO
CEO
EBO
DSS
I
DM
I
θ JA
D
C
D
STG
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.006 grams (approximate)
Q
Internal Schematic
1
S
-55 to +150
D
2
2
TOP VIEW
Value
Value
Value
-100
±12
160
560
-5.0
250
500
-50
-45
50
G
B
2
C
E
Q
2
DMB54D0UDW
© Diodes Incorporated
Units
°C/W
Unit
Unit
mW
mA
mA
mA
°C
V
V
V
V
V
March 2009

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DMB54D0UDW Summary of contents

Page 1

... A Symbol V CBO V CEO V EBO 25°C unless otherwise specified A Symbol θ STG www.diodes.com DMB54D0UDW TOP VIEW Internal Schematic Value Units 50 V ±12 V 160 mA 560 mA Value ...

Page 2

... I CBO — — -4.0 µA 100 — — MHz — — 4 — — www.diodes.com DMB54D0UDW Unit Test Condition 0V 250μ μA = 50V ±8V μA = ±12V 250μ ...

Page 3

... 2. 80mA 100 125 150 www.diodes.com DMB54D0UDW V = 10V 85° 25° 150° -55° 125° GATE SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics T = 150° 125° ...

Page 4

... DMB54D0UDW Document number: DS31677 Rev MOSFET (continued) 1 0.1 0. 85°C A 0.001 0.0001 100 125 150 0.1 100 150 ° www.diodes.com DMB54D0UDW T = 150° 125° 25° -55°C A 0.3 0.5 0.7 0.9 1 SOURCE-DRAIN VOLTAGE (V) SD Fig. 8 Diode Forward Voltage vs. Current March 2009 ...

Page 5

... Y = Year (ex 2008 Month (ex September) 2010 2011 2012 X Y Mar Apr May Jun Jul www.diodes.com DMB54D0UDW 25° 150° -50° 100 COLLECTOR CURRENT (mA) C Fig. 11 Collector-Emitter Saturation Voltage vs. Collector Current Packaging 3000/Tape & ...

Page 6

... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMB54D0UDW Document number: DS31677 Rev Dim All Dimensions Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMB54D0UDW SOT-363 Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0. ...

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