QST7 ROHM Co. Ltd., QST7 Datasheet - Page 2

• Manufacturer Part Number: QST7
• Description: Low Vce Sat Transistor
• Manufacturer: ROHM Co. Ltd.

Transistors
! ! ! ! Packaging specifications
! ! ! ! Electrical characteristic curves
Type
QST7
1000
0.001
100
0.01
10
Fig.4 Grounded emitter propagation
0.1
0.001
1
1000
0
100
10
BASE TO EMITTER CURRENT : V
1
0.1
V
Pulsed
CE
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
EMITTER TO BASE VOLTAGE : V
=−2V
characteristics
COLLECTOR CURRENT : I
Ta=25°C
Ta=100°C
Fig.1 DC current gain
0.01
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ta=−40°C
Package
Code
Basic ordering unit (pieces)
0.5
Ta=100°C
vs. collector current
1
0.1
Ta=−40°C
Cib
Ta=25°C
1
10
1
Cob
C
V
Pulsed
(A)
CE
Ta = 25°C
I
f = 1MHz
BE
C
=−2V
= 0A
(V)
EB
10
( V)
1.5
CB
( V)
100
1000
Fig.2 Collector-emitter saturation voltage
100
Taping
0.01
10
0.01
3000
0.1
0.001
TR
1
V
V
base-emitter saturation voltage
vs. collector current
Fig.5 Gain bandwidth product
BE(sat)
CE(sat)
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.01
vs. emitter current
0.1
Ta=−40°C
Ta=25°C
Ta=100°C
0.1
1
Ta=100°C
Ta=−40°C
Ta=25°C
E
Ta=25°C
V
f=100MHz
(A)
1
CE
I
Pulsed
C
C
(A)
/I
=−2V
B
=20/1
10
10
Fig.3 Collector-emitter saturation voltage
1000
0.001
100
0.01
0.1
10
0.001
10
0.01
1
1
Ta=25°C
Pulsed
I
C
vs. collector current
/I
B
=20/1
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
I
C
/I
0.01
B
Fig.6 Switching time
=50/1
0.1
0.1
tstg
I
C
/I
tf
B
=10/1
1
tdon
QST7
tr
1
Ta=25°C
V
I
C
C
C
CE
(A)
/I
(A)
B
=−5V
=20/1
2/2
10
10