DIM400PBM17-A000 Dynex Semiconductor, DIM400PBM17-A000 Datasheet - Page 7

• Manufacturer Part Number: DIM400PBM17-A000
• Description: Igbt Bi-directional Switch Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
800
700
600
500
400
300
200
100
400
300
250
200
150
100
350
50
0
0
0
0
V
and not the auxiliary terminals
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
T
F
j
is measured at power busbars
= 125˚C
0.5
400
1.0
Reverse voltage, V
Foward voltage, V
800
1.5
2.0
1200
T
j
= 25˚C
F
R
- (V)
- (V)
2.5
T
1600
j
= 125˚C
3.0
2000
3.5
900
800
700
600
500
400
300
200
100
100
0.1
10
0.001
1
0
0
Conditions:
T
V
R
case
ge
g(off)
200
Fig. 8 Reverse bias safe operating area
= 15V,
= 125˚C,
Fig. 10 Transient thermal impedance
IGBT
Diode
= 4.7ohms
400
0.01
Collector emitter voltage, V
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
600
Pulse width, t
800 1000 1200 1400 1600 1800
DIM400PBM17-A000
0.1
1.12
0.12
2.47
0.11
Diode
1
p
- (s)
18.52
8.01
3.89
4.24
2
Module
ce
Chip
- (V)
11.28
47.15
25.92
48.75
1
3
Transistor
257.21
256.75
15.62
33.06
4
10
7/10