DIM400BSS17-A000 Dynex Semiconductor, DIM400BSS17-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM400BSS17-A000
• Description: Igbt Modules - 1700v
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
800
700
600
500
400
300
200
100
400
300
250
200
150
100
350
50
SEMICONDUCTOR
0
0
0
Fig.9 Diode reverse bias safe operating area
0
Fig.7 Diode typical forward characteristics
V
and not the auxiliary terminals
T
F
j
= 125°C
is measured at power busbars
0.5
400
1.0
Reverse voltage, V
Foward voltage, V
800
1.5
2.0
1200
T
j
R
= 25° C
F
- (V)
- (V)
2.5
T
1600
j
= 125° C
3.0
2000
3.5
100
900
800
700
600
500
400
300
200
100
0.1
10
0.001
1
0
0
Conditions:
T
V
R
case
ge
g(off)
Fig.8 Reverse bias safe operating area
200
= 15V,
Fig.10 Transient thermal impedance
= 125°C,
IGBT
Diode
= 4.7ohms
400
0.01
Collector emitter voltage, V
R
t
R
t
i
i
Diode
i
(ms)
i
(ms)
(°C/KW)
(°C/KW)
600
Pulse width, t
800 1000 1200 1400 1600 1800
0.1
1.05
2.24
0.10
0.11
1
p
- (s)
12.64
5.81
3.14
3.21
DIM400BSS17-A000
2
Module
ce
Chip
- (V)
21.92
45.60
37.12
38.58
1
3
Transistor
143.02
113.97
14.76
45.02
6
4
/
8
10