DIM400GCM33-F000 Dynex Semiconductor, DIM400GCM33-F000 Datasheet - Page 5

• Manufacturer Part Number: DIM400GCM33-F000
• Description: Igbt Chopper Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
T
Symbol
Symbol
case
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
E
E
E
E
t
t
t
t
E
E
d(off)
d(on)
d(off)
d(on)
Q
Q
Q
I
REC
I
REC
OFF
OFF
t
t
t
t
= 25° C unless stated otherwise.
ON
= 125° C unless stated otherwise.
ON
rr
rr
f
r
f
r
g
rr
rr
SEMICONDUCTOR
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Gate charge
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
L
R
R
I
I
F
F
G(ON)
G(ON)
= 400A, V
= 400A, V
dl
dl
Test Conditions
Test Conditions
100nH, C
F
F
R
R
V
V
C
/dt = 2000A/µs
/dt = 4000A/µs
V
V
L
Diode arm
Diode arm
= R
G(ON)
= R
G(ON)
I
CE
I
CE
ge
C
GE
C
GE
= 400A
= 400A
= 1800V
= 110nF
= 1800V
= ±15V
100nH
= ±15V
G(OFF)
G(OFF)
= 5.6
= 5.6
R
R
ge
= 1800V,
= 1800V,
= 110nF
= 8.2
= 8.2
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2100
1130
2150
1160
Typ.
Typ.
210
520
245
620
160
330
150
220
600
285
870
300
400
300
10
DIM400GCM33-F000
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
/
9
Units
Units
mJ
µC
mJ
µC
mJ
mJ
mJ
µC
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A