NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 10

• Manufacturer Part Number: NUS6189MN
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
0.25
0.15
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.001
0
Figure 15. Collector Emitter Saturation Voltage
0.001
0.001
150°C (5.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
150°C (2.0 V)
Figure 19. Base Emitter Turn−On Voltage vs.
25°C (5.0 V)
25°C (2.0 V)
V
Figure 17. DC Current Gain vs. Collector
IC/IB = 10
CE
TYPICAL CHARACTERISTICS − SINGLE PNP TRANSISTOR (BJT − CHARGING)
= −2.0 V
0.01
I
C
0.01
I
0.01
, COLLECTOR CURRENT (A)
C
I
C
, COLLECTOR CURRENT (A)
vs. Collector Current
, COLLECTOR CURRENT (A)
Collector Current
150°C
−55°C
25°C
Current
0.1
0.1
0.1
V
CE(sat)
25°C
1.0
= 150°C
1.0
1.0
−55°C
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10
10
10
10
0.35
0.25
0.15
0.05
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.8
0.6
0.4
0.2
0.3
0.2
0.1
0
0
0.001
0.001
0.01
Figure 16. Collector Emitter Saturation Voltage
Figure 18. Base Emitter Saturation Voltage vs.
IC/IB = 10
IC/IB = 100
10 mA
−55°C
150°C
100 mA
Figure 20. Saturation Region
25°C
0.01
0.01
I
I
0.1
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
vs. Collector Current
B
, BASE CURRENT (mA)
Collector Current
1.0
0.1
0.1
V
CE(sat)
V
CE
300 mA
= 150°C
−55°C
(V) I
1.0
1.0
10
C
= 500 mA
25°C
100
10
10