DNLS320E Diodes, Inc., DNLS320E Datasheet - Page 2

• Manufacturer Part Number: DNLS320E
• Description: Low Vce Sat Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Notes:
DS31326 Rev. 3 - 2
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
1.0
0.8
0.6
0.2
0.4
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
Characteristic
T , AMBIENT TEMPERATURE (°C)
A
50
75
@T
100
A
= 25°C unless otherwise specified
125
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
C
h
CBO
EBO
150
t
t
f
off
FE
obo
on
ibo
T
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Min
500
400
150
150
2 of 4
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
0.04
0.18
0.24
Typ
230
220
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
23
26
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Max
0.10
0.50
0.45
100
100
0.9
0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
MHz
Unit
nA
nA
pF
pF
⎯
ns
ns
V
V
V
V
V
V
Test Condition
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
V
I
C
C
E
C
C
C
C
B1
2
CB
EB
CE
CE
CE
CE
CE
EB
CB
CC
= 0.1A, I
= 2A, I
= 3A, I
= 100μA, I
= 10mA, I
= 100μA, I
= 1A, I
I = 5mA
I = 1mA
I = 2mA
B
I = 4mA
= -I
I = 3mA
B
B
B
B
= 4V, I
= 0.5V, f = 1MHz
= 16V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 5V, I
= 10V, f = 1MHz
= 10V, I
B2
B
B
B
= 50mA
= 10mA
= 20mA
B
= 10mA
C
C
C
C
C
C
3
B
E
C
= 0.5mA
C
E
= 0
= 1A
= 0.1A
= 2A
= 6A
= 50mA, f = 50MHz
= 0
= 0
= 500mA
= 0
= 0
4
© Diodes Incorporated
DNLS320E
5