DZT851 Diodes, Inc., DZT851 Datasheet - Page 2

• Manufacturer Part Number: DZT851
• Description: Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Switching Times
Notes:
DS30738 Rev. 3 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
*
3.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
Device mounted on FR-4 PCB, pad layout as shown on page 4.
Characteristic
@T
@T
amb
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
BE(ON)
www.diodes.com
h
CBO
EBO
t
t
f
on
off
FE
obo
T
2 of 4
Min
150
100
100
60
75
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
Fig. 2 Collector Current vs. Collector Emitter Voltage
1100
Typ
130
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45
45
1200
1150
Max
100
170
375
300
50
10
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
MHz
mV
mV
mV
nA
μA
nA
pF
⎯
ns
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
E
C
C
C
C
C
CE
C
C
C
C
C
C
B2
CB
CB
EB
CB
= 0.1A, I
= 6A, I
= 10mA, V
= 100μA, I
= 100μA, I
= 10mA*, I
= 1A, I
= 2A, I
= 6A, I
= 2A, V
= 5A, V
= 10A, V
= 100mA, V
= 1A, I
= 100mA, V
= 6A, V
= 120V, I
= 120V, I
= 6V, I
= 10V, f = 1MHz
B
B
B
B
B1
B
CE
CE
B
B
B
Test Condition
= 300mA*
= 50mA*
= 50mA*
= 300mA*
C
B
CE
CE
= 100mA
B
= 5mA*
= 0
= 1V*
= 1V*
E
C
CE
B
E
E
= 1V*
= 1V*
B
= 0
= 0
CE
= 0
= 0
= 0, T
CC
= 1V*
= 10V,
= 10V
© Diodes Incorporated
A
= 100°C
DZT851