DPLS325E Diodes, Inc., DPLS325E Datasheet - Page 2

• Manufacturer Part Number: DPLS325E
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC CHARACTERISTICS
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Notes:
DS31327 Rev. 3 - 2
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
1.0
0.8
0.6
0.2
0.4
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
@T
100
A
= 25°C unless otherwise specified
125
150
V
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
BE(ON)
C
I
C
h
www.diodes.com
CBO
EBO
t
t
f
obo
on
off
FE
ibo
T
2 of 4
Min
300
250
200
100
100
-25
-25
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
1.5
1.2
0.9
0.6
0.3
-0.11
-0.20
-0.21
Typ
-8.5
-0.8
-0.8
290
200
-58
-38
0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
46
38
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-0.25
-0.45
Max
-0.1
-0.1
-0.5
-1.0
800
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
MHz
MHz
μA
μA
pF
⎯
ns
ns
V
V
V
V
V
V
2
I
I
I
V
V
V
I
I
I
I
V
V
V
V
V
V
f = 30MHz
V
V
V
I
C
C
E
C
C
C
C
B1
CB
CB
EB
CE
CE
CE
CE
CE
CE
EB
CB
CC
= -100μA, I
= -1A, I
= -2A, I
= -1A, I
= -100μA, I
= -10mA, I
= -3A, I
= -I
= -5V, I
= -15V, I
= -15V, I
= -4V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -0.5V, f = 1MHz
= -10V, f = 1MHz
= -10V, I
3
B2
I = -1mA
I = -5mA
I = -3mA
I = -2mA
B
I = -4mA
B
B
B
= -50mA
B
B
B
B
B
Test Condition
= -10mA
= -20mA
= -10mA
= -100mA
C
C
C
C
C
C
C
B
E
E
C
C
= 0
= -10mA
= -1A
= -50mA,
E
= -1A
= -2A
= -6A
= 0
= 0
= 0, T
= -500mA,
= 0
= 0
4
© Diodes Incorporated
A
= 100°C
DPLS325E
5