UML11N ROHM Co. Ltd., UML11N Datasheet - Page 2

• Manufacturer Part Number: UML11N
• Description: General Purpose Transistor Isolated Transistor And Diode
• Manufacturer: ROHM Co. Ltd.

Transistors
Di1
Tr2
Di1 / DTr2
Di1
Tr2
∗ Each terminal mounted on a recommended.
∗ Each terminal mounted on a recommended.
Forward voltage
Reverse current
Average rectified forward current
Forward current surge peak (60H
Reverse voltage (DC)
Junction temperature
Collector-base voltage
Collector-emitter voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
Power dissipation
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Absolute maximum ratings (Ta=25GC)
Emitter-base voltage
Electrical characteristics (Ta=25GC)
Parameter
Parameter
Parameter
Parameter
Parameter
Z
, 1∞)
Symbol
Symbol
V
V
V
Tstg
P
P
Tj
CBO
CEO
EBO
I
C
D
d
Symbol
I
Symbol
FSM
V
I
Tj
V
BV
BV
BV
O
Symbol
R
Cob
I
I
−55 to +125
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
V
I
Limits
Limits
R
−150
F
−60
−50
120
150
150
−6
Limits
Min.
−60
−50
180
200
125
−6
30
−
−
−
−
−
1
Min.
−
−
mW
mW
Unit
Unit
mA
Typ.
140
°C
°C
4.0
V
V
V
−
−
−
−
−
−
−
∗
∗
Unit
Typ.
0.40
mA
4.0
°C
A
V
−100
−100
−500
Max.
390
5.0
−
−
−
−
Max.
0.50
30
MHz
Unit
mV
nA
nA
pF
V
V
V
−
Unit
µA
V
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=−50µA
=−50µA
=−1mA
/I
B
=−60V
=−6V
=−6V, I
=−12V, I
=−12V, I
=−50mA/−5mA
I
V
F
=200mA
R
=10V
EML11 / UML11N
C
=−1mA
E
E
=2mA, f=100MHz
=0A, f=1MHz
Conditions
Conditions
Rev.B
2/4