UNR5117G Panasonic Corporation of North America, UNR5117G Datasheet - Page 3

• Manufacturer Part Number: UNR5117G
• Description: Transistor With Builtin Resistors
• Manufacturer: Panasonic Corporation of North America

■ Electrical Characteristics (continued) T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Resistance
ratio
Common characteristics chart
Characteristics charts of UNR5110G
−120
−100
−80
−60
−40
−20
250
200
150
100
50
0
0
2. * : Rank classification
0
0
I
Collector-emitter voltage V
B
= −1.0 mA
Ambient temperature T
− 0.9 mA
−2
− 0.8 mA
40
Parameter
Rank
−4
UNR5114G
UNR511HG
UNR511TG
UNR511FG
UNR511VG
UNR5111G/5112G/5113G/511LG
UNR511EG
UNR511DG
h
I
P
− 0.7 mA
C
FE
T
 V
 T
−6
− 0.6 mA
80
− 0.5 mA
CE
a
−8
This product complies with the RoHS Directive (EU 2002/95/EC).
− 0.4 mA
160 to 260
T
120
a
a
− 0.1 mA
− 0.2 mA
− 0.3 mA
= 25°C
−10
CE
( °C )
Q
( V )
−12
160
Symbol
210 to 340
− 0.01
−100
− 0.1
−10
−1
R
−0.1
Collector current I
a
−25°C
SJH00196AED
= 25°C ± 3°C
V
290 to 460
−1
CE(sat)
25°C
S
Conditions
 I
T
−10
a
C
= 75°C
C
I
( mA )
C
/ I
160 to 460
No-rank
B
= 10
−100
400
300
200
100
0
0.17
0.17
0.37
1.70
−1
Min
0.8
3.7
UNR511xG Series
Collector current I
0.21
0.22
0.47
0.47
2.14
Typ
1.0
1.0
4.7
−10
h
FE
 I
Max
0.25
0.27
0.57
2.60
1.2
5.7
−100
C
T
C
a
V
25°C
−25°C
= 75°C
( mA )
CE
= –10 V
Unit
−1 000
3