UNR211W Panasonic Corporation of North America, UNR211W Datasheet
UNR211W
Manufacturer Part Number
UNR211W
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR211W.pdf
(2 pages)
Transistors with built-in Resistor
UNR211W
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• Base-emitter resistance R
• Mini type package, allowing downsizing of the sets and automatic
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
insertion through the tape packing
Parameter
Parameter
BE
: 100 kΩ,
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
P
I
T
V
V
CBO
CEO
a
I
I
I
stg
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
CBO
CEO
= 25°C
FE
T
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
−100
C
C
C
−50
−50
200
150
CB
CE
EB
CE
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00007BED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
C
E
E
= 0
= 0
= 0
= 0
= 0
= −5 mA
= − 0.3 mA
= 2 mA, f = 200 MHz
Marking Symbol: 7F
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
(100 kΩ)
−30%
0.40
Min
−50
−50
3
B
80
2
R
2
+0.10
–0.05
Typ
100
100
− 0.25
Mini3-G1 Package
+30%
− 0.1
− 0.5
−100
Max
0.16
EIAJ : SC-59
C
E
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
MHz
Unit
µA
µA
µA
kΩ
V
V
V
1
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UNR211W Summary of contents
Page 1
... Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planar type For digital circuits ■ Features • Base-emitter resistance R : 100 kΩ, BE • Mini type package, allowing downsizing of the sets and automatic insertion through the tape packing ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...