Transistors with built-in Resistor
UNR5154
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
• S-Mini type package, allowing automatic insertion through tape
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance
Resistance ratio
reduction of the number of parts
packing and magazine packing
Parameter
Parameter
(UN5154)
a
Symbol
Symbol
V
= 25°C ± 3°C
R
V
V
V
V
I
I
I
V
FE
V
T
CE(sat)
h
CBO
P
CEO
EBO
R
1
I
T
f
CBO
CEO
CBO
CEO
a
stg
FE
OH
OL
/R
C
T
T
j
1
= 25°C
2
−55 to +150
Rating
−100
I
I
V
V
V
V
I
V
V
V
−30
−30
150
150
C
C
C
Note) The part number in the parenthesis shows conventional part number.
CB
CB
CE
EB
CE
CC
CC
= −10 µA, I
= −2 mA, I
= −50 mA, I
SJH00023BED
= −10 V, I
= −30 V, I
= −30 V, I
= −3 V, I
= −10 V, I
= −5 V, V
= −5 V, V
Conditions
Unit
mW
mA
°C
°C
B
C
V
V
E
E
C
B
B
B
E
B
= 0
= 0
= 0
= 1 mA, f = 200 MHz
= − 0.33 mA
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
Marking Symbol: EV
Internal Connection
L
L
= 1 kΩ
= 1 kΩ
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
−30%
(47 kΩ)
−4.9
B
Min
−30
−30
R
80
2
R
1
(10 kΩ)
2
0.213
− 0.5
Typ
80
10
SMini3-G1 Package
+30%
− 0.1
− 0.5
− 0.1
− 0.2
Max
−1.2
0.15
C
E
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
+0.10
–0.05
Unit: mm
MHz
Unit
mA
µA
kΩ
V
V
V
V
V
1