TPD4123K TOSHIBA Semiconductor CORPORATION, TPD4123K Datasheet - Page 13
TPD4123K
Manufacturer Part Number
TPD4123K
Description
Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPD4123K.pdf
(23 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
3.4
3.0
2.6
2.2
1.8
1.4
1.8
1.6
1.4
1.2
1.0
2.0
1.5
1.0
0.5
−50
−50
0
12
V CC = 15 V
Control power supply voltage V
Junction temperature T
Junction temperature T
0
0
14
V
I
CEsat
CC
V
T
T
T
F
j
j
j
=−40°C
=25°C
=135°C
H – T
– V
50
50
H – T
CC
j
j
I C = 700 mA
I C = 500 mA
I C = 300 mA
I F = 700 mA
I F = 500 mA
I F = 300 mA
16
j
j
100
100
(°C)
(°C)
CC
(V)
150
150
18
13
3.4
3.0
2.6
2.2
1.8
1.4
1.8
1.6
1.4
1.2
1.0
8.0
7.5
7.0
6.5
6.0
−50
−50
12
V CC = 15 V
Control power supply voltage V
I REG = 30 mA
Junction temperature T
Junction temperature T
0
0
14
V
V
REG
CEsat
V
T
T
T
j
j
j
F
=−40°C
=25°C
=135°C
L – T
50
50
– V
L – T
CC
j
j
I C = 700 mA
I C = 500 mA
I C = 300 mA
I F = 300 mA
16
I F = 700 mA
I F = 500 mA
j
j
100
100
(°C)
(°C)
CC
TPD4123K
2008-05-14
(V)
150
150
18