TPD4102K TOSHIBA Semiconductor CORPORATION, TPD4102K Datasheet - Page 15

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TPD4102K

Manufacturer Part Number
TPD4102K
Description
Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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500
400
300
200
100
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
−20
−20
0
12
Control power supply voltage V
Junction temperature T j (°C)
Junction temperature T
20
20
14
I
BS
V
F (BSD)
Wtoff – T
– V
−20°C
25°C
135°C
60
60
BS
(ON)
– T
j
j
16
j
100
100
I C = 700 mA
(°C)
BS
I C = 500 mA
I C = 300 mA
I F = 300 μA
I F = 700 μA
I F = 500 μA
(V)
140
140
18
15
250
500
400
300
200
100
200
150
100
50
−20
0
12
Control power supply voltage V
Junction temperature T
20
14
I
BS
Wton – T
– V
−20°C
25°C
135°C
BS
60
(OFF)
j
16
j
I C = 700 mA
100
I C = 500 mA
(°C)
I C = 300 mA
BS
TPD4102K
(V)
2004-07-07
140
18

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