NTNKE4891N ON Semiconductor, NTNKE4891N Datasheet
NTNKE4891N
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NTNKE4891N Summary of contents
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NTMKE4891N Power MOSFET 25 V, 129 A, Single N−Channel, ICEPAK Features • Low Package Inductance • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual ...
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THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) (Note 1) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Notes 2 and 3) Junction−to−PCB (Note 2) ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero ...
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V − 6.5 V 140 4.5 V − 4.2 V 120 3.8 V 100 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.0060 0.0055 0.0050 ...
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C iss 4500 4000 3500 3000 2500 2000 1500 C oss 1000 500 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...
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... E2 1.22 H 0.75 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...