YG801C09R Fuji Electric holdings CO.,Ltd, YG801C09R Datasheet - Page 2

• Manufacturer Part Number: YG801C09R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(90V / 5A TO-22OF15)
160
150
140
130
120
110
100
Characteristics
90
80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
0
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Current Derating (Io-Tc)
Forward Characteristic
Forward Power Dissipation
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
0.2
1
Tj=150
Tj=100
Tj=125
Io
Io
Io
360°
Square wave
Square wave
0.4
Io
Square wave
360°
o
o
o
Sine wave
C
C
C
Average Forward Current
2
VF
Average Output Current
0.6
VR=50V
Forward Voltage (V)
3
0.8
=180
=120
=180
=60
DC
o
o
o
o
4
1.0
(typ.)
1.2
Tj=25
5
Square wave
Square wave
Sine wave
Square wave
DC
o
C
1.4
6
Per 1element
1.6
(A)
=180
(A)
7
=120
=60
=180
1.8
o
o
o
o
8
2.0
1000
10
10
10
100
10
10
10
14
12
10
-1
-2
-3
8
6
4
2
0
1
0
0
0
Junction Capacitance Characteristic
Reverse Power Dissipation
Reverse Characteristic (typ.)
10
VR
20
20
360°
VR
VR
10
VR
30
Reverse Voltage
Reverse Voltage (V)
Reverse Voltage (V)
40
40
(typ.)
50
YG801C09R
60
60
70
100
80
80
(V)
90
Tj=150
Tj=125
Tj=100
Tj=25
100 110
DC
=180
100
o
o
C
o
o
C
C
C
o