YG808C10R Fuji Electric holdings CO.,Ltd, YG808C10R Datasheet - Page 2

• Manufacturer Part Number: YG808C10R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(100V / 30A TO-22OF15)
160
150
140
130
120
110
100
Characteristics
100
90
80
70
60
50
40
30
20
10
0.1
28
26
24
22
20
18
16
14
12
10
10
0
8
6
4
2
0
1
0.0
0
0
Current Derating (Io-Tc)
Forward Characteristic
Forward Power Dissipation
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
Io
0.2
Io
5
2
360°
Io
Square wave
Square wave
Average Output Current
0.4
Square wave
Io
10
VF
Sine wave
Average Forward Current
360°
4
0.6
VR=50V
15
Forward Voltage
6
0.8
=180
=180
=120
=60
20
DC
o
o
o
o
1.0
8
25
1.2
(typ.)
10
30
Tj=150
Tj=125
Tj=100
Tj=25
Square wave
Sine wave
Square wave
Square wave
DC
1.4
(V)
(A)
o
Per 1element
12
C
35
o
o
o
C
C
C
1.6
(A)
14
40
=180
1.8
=60
=180
=120
o
o
45
o
o
2.0
16
1000
100
10
10
10
10
10
10
10
50
45
40
35
30
25
20
15
10
-1
-2
5
0
3
2
1
0
1
0
0
Reverse Power Dissipation
Reverse Characteristic (typ.)
Junction Capacitance Characteristic
10
10
VR
20
20
VR
VR
VR
360°
30
30
10
Reverse Voltage
(typ.)
Reverse Voltage
Reverse Voltage
40
40
50
50
YG808C10R
60
60
70
70
100
80
80
(V)
(V)
(V)
90 100 110
90
Tj=150
Tj=100
Tj=125
Tj=25
=180
100 110
DC
o
o
C
o
o
1000
o
C
C
C