YG862C10R Fuji Electric holdings CO.,Ltd, YG862C10R Datasheet - Page 2

no-image

YG862C10R

Manufacturer Part Number
YG862C10R
Description
Low Ir Schottky Barrier Diode
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
YG862C10R
Manufacturer:
FUJI
Quantity:
64 000
Part Number:
YG862C10R
Manufacturer:
ST
Quantity:
20 000
Part Number:
YG862C10R
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
(100V / 10A )
Characteristics
160
150
140
130
120
110
100
0.1
10
90
80
1
6
5
4
3
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
0
Forward Power Dissipation (max.)
Square wave
Forward Characteristic (typ.)
Current Derating (Io-Tc) (max.)
Square wave
λ
Io:Output current of center-tap full wave connection
Square wave
:Conduction angle of forward current for each rectifier element
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
Sine wave
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
Io
360 º
360 º
1
Io Average Forward Current (A)
Io
Io Average Output Current (A)
λ
λ
λ
=180
=120
VF Forward Voltage (V)
λ
=180
DC
=60
o
o
o
2
VR=50V
5
o
3
10
4
Square wave
Square wave
DC
Sine wave
Square wave
Per 1element
5
Tj=150
Tj=125
Tj=25
Tj=100
λ
=180
λ
λ
λ
=180
=120
=60
o
C
o
o
o
o
C
C
C
o
15
6
o
o
1000
10
10
10
10
10
10
100
10
-1
-2
-3
-4
1
0
7
6
5
4
3
2
1
0
0
1
0
Junction Capacitance Characteristic (max.)
Reverse Power Dissipation (max.)
Reverse Characteristic (typ.)
VR
10
10
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
20
20
360 º
VR Reverse Voltage (V)
30
VR
30
1 2 3 4 5
1 2 3 4 5
1 2 3 4 5
1 2 3 4 5
1 2 3 4 5
1 2 3 4 5
1 2 3 4 5
VR Reverse Voltage (V)
YG862C10R (10A)
40
10
40
Reverse Voltage (V)
50
50
60
60
70
70
100
80
80
90 100 110 120
90 100 110 120
Tj=150
Tj=100
Tj= 25
Tj=125
α
o
C
=180
DC
o
o
C
o
1000
C
o
C

Related parts for YG862C10R