YG831C03R Fuji Electric holdings CO.,Ltd, YG831C03R Datasheet - Page 2

• Manufacturer Part Number: YG831C03R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(30V / 6A TO-22OF15)
Characteristics
160
155
150
145
140
135
130
125
120
115
110
105
100
0.01
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
1
0
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
1
0.1
IO
Io:Output current of center-tap full wave connection
Io
360°
:Conduction angle of forward current for each rectifier element
Square wave =120°
Square wave =180°
0.2
Forward Characteristic (typ.)
Current Derating (Io-Tc)
Io
Square wave =60°
2
Io
Forward Power Dissipation
Average Output Current
Sine wave =180°
360°
Average Forward Current
0.3
VR=20V
3
VF Forward Voltage (V)
0.4
4
DC
Tj=125°C
Tj=150°C
Tj=100°C
0.5
Tj=25°C
5
0.6
6
(A)
DC
Square wave =180°
Square wave =120°
Square wave =60°
Sine wave =180°
0.7
Per 1element
(A)
7
0.8
8
0.9
9
1.0
1000
100
10
10
10
10
10
10
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-1
-2
-3
2
1
0
0
0
2
Junction Capacitance Characteristic (typ.)
4
5
VR
6
Reverse Characteristic (typ.)
Reverse Power Dissipation
8
360°
10
VR Reverse Voltage (V)
VR
VR
10 12 14 16 18 20 22 24 26 28 30 32
10
Reverse Voltage
15
Reverse Voltage (V)
YG831C03R
20
25
(V)
30
Tj=125°C
Tj=150°C
Tj=100°C
Tj=25°C
=180°C
35
DC
100