YG838C03R Fuji Electric holdings CO.,Ltd, YG838C03R Datasheet - Page 2

• Manufacturer Part Number: YG838C03R
• Description: Schottky-barrier Diodes
• Manufacturer: Fuji Electric holdings CO.,Ltd

(30V / 38A )
Characteristics
160
150
140
130
120
110
100
100
90
80
70
60
50
0.1
10
26
24
22
20
18
16
14
12
10
1
8
6
4
2
0
0.0
0
Current Derating (Io-Tc)
0
Forward Characteristic (typ.)
ƒ É : Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Forward Power Dissipation
5
0.1
2
Io
Io
Io
360°
10
Square wave =120°
Square wave =180°
0.2
360°
Io
VF
Square wave =60°
4
Sine wave =180°
Average Forward Current
15
0.3
Average Output Current
VR=20V
6
Forward Voltage
20
0.4
8
25
DC
0.5
10
30
0.6
Square wave =60°
12
35
0.7
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Square wave =180°
Square wave =120°
14
40
Sine wave =180°
(V)
DC
Per 1element
0.8
16
45
(A)
(A)
0.9
50
18
1.0
55
20
10000
1000
100
10
10
10
10
10
10
10
34
32
30
28
26
24
22
20
18
16
14
12
10
-1
-2
8
6
4
2
0
3
2
1
0
0
Junction Capacitance Characteristic (typ.)
0
Reverse Power Dissipation
Reverse Characteristic (typ.)
VR
5
5
VR
VR
360°
10
1
VR Reverse Voltage (V)
10
YG838C03R (38A)
Reverse Voltage
Reverse Voltage (V)
15
15
20
20
10
25
25
30
(V)
Tj=150°C
Tj=100°C
Tj= 25°C
Tj=125°C
30
35
DC
=180°
100
40
35