DE275X2-501N16A IXYS Corporation, DE275X2-501N16A Datasheet

DE275X2-501N16A

Manufacturer Part Number

DE275X2-501N16A

Description

De275x2-501n16a Rf Power Mosfet

Manufacturer

IXYS Corporation

Datasheet

1.DE275X2-501N16A.pdf (4 pages)

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♦

The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a

common source configuration. The device is optimized for push-pull or paral-

lel operation in RF generators and amplifiers at frequencies to >65 MHz.

Unless noted, specifications are for each device

Symbol

dv/dt

Symbol

Weight

D25

GSS

DSS

stg

DSS

DGR

GSM

DHS

DAMB

DSS

GS(th)

thJC

thJHS

DS(on)

Common Source Push-Pull Pair

N-Channel Enhancement Mode

Low Q

High dv/dt

Nanosecond Switching

(1)

Test Conditions

Continuous

Transient

Test Conditions

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

1.6mm (0.063 in) from case for 10 s

and R

≤ I

≤ 150°C, R

= 0

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

= 25°C, Derate 6.0W/°C above 25°C

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 V

= 0

= 15 V, I

, di/dt ≤  1 00A/µs, V

, I

DSS

= 3 ma

= 4 ma

, V

= 0.5I

= 0.2Ω

= 25°C

= 125°C

= 0

D25

, pulse test

= 1 MΩ

≤ V

DSS

Characteristic Values

= 25°C unless otherwise specified

min.

500

-55

2.5

Maximum Ratings

typ.

175

300

>200

1180

0.13

0.17

500

±20

±30

186

750

5.0

max.

+175

±100

0.38

5.5

V/ns

C/W

µA

°C

Ω

DE275X2-501N16A

RF Power MOSFET

GATE 1

Features

•

−

•

−

•

Advantages

•

Note: All specifications are per each

transistor, unless otherwise noted.

(1)

package, not per transistor

SG1

Thermal specifications are for the

Isolated Substrate

IXYS advanced low Q

Low gate charge and capacitances

Low R

Very low insertion inductance (<2nH)

No beryllium oxide (BeO) or other

hazardous materials

High Performance Push-Pull RF

Package

Optimized for RF and high speed

switching at frequencies to >65MHz

Easy to mount—no insulators needed

High power density

high isolation voltage (>2500V)

excellent thermal transfer

Increased temperature and power

cycling capability

easier to drive

faster switching

SD1

D25

DRAIN 1

DSS

DS(on)

= 1180 W

DRAIN 2

process

SD2

0.38 Ω

500 V

16 A

SG2

GATE 2

Related parts for DE275X2-501N16A

DE275X2-501N16A Summary of contents

Page 1

... High dv/dt ♦ Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral- lel operation in RF generators and amplifiers at frequencies to >65 MHz. Unless noted, specifications are for each device Symbol Test Conditions ...

Page 2

... Characteristic Values (T = 25°C unless otherwise specified) J min. typ. max. 16 186 JM 1.5 200 0.8 6.5 4,881,106 4,891,686 4,931,844 5,063,307 5,187,117 5,237,481 DE275X2-501N16A RF Power MOSFET Ω µC A 5,017,508 5,486,715 ...

Page 3

... Capacitances vs Vds DE275X2-501N16A 200 250 300 350 Vds in Volts RF Power MOSFET Ciss Coss Crss 400 450 500 ...

Page 4

... D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS 10 DRAIN 4 Lg Doff Roff D1crs D2crs Ron 2 Don 7 30 SOURCE Figure 1 DE-SERIES SPICE Model DE275X2-501N16A RF Power MOSFET , L and the DS(ON) , and reverse transfer ca- OSS Dcos Rds Ls Doc #9200-0245 Rev 3 © 2003 IXYS RF ...

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