Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Marking:103
Ordering number:ENN3962A
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C
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C
B
C
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· Composite type with a PNP transistor and a Shottky
· The FP103 is formed with 2chips, one being equiva-
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barrier diode contained in one package, facilitating
high-density mounting.
lent to the 2SB1121 and the other the SB07-03C,
placed in one package.
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SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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SANYO Electric Co.,Ltd. Semiconductor Company
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Mounted on a ceramic board (250mm
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0
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80700TS (KOTO)/52098HA (KT)/62094MT (KOTO) AX-8057 No.3962–1/5
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DC/DC Converter Applications
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Package Dimensions
unit:mm
2088A
1
c
c y
e l
C
o
n
d
t i
1.75
o i
5
0.5
6
4
n
s
PNP Epitaxial Planar Silicon Transistor
3
4.5
3.4
1.8
2.8
3.5
2
2
1.75
0.5
0.8mm)
7
1.2
1
0.3
[FP103]
1 : Base
2 : Common (Collector/Cathode)
3 : Emitter
4 : Common (Collector/Cathode)
5 : Anode
6 : Common (Collector/Cathode)
7 : Common (Collector/Cathode)
SANYO : PCP4
Schottky Barrier Diode
1.5
0.4
0 to 0.1
0.2
R
t a
–
–
–
n i
5
5
5
5
5
5
FP103
g
s
o t
o t
o t
–
+
+
+
–
–
4
1
1
7
1
1
1
3
2
–
–
–
0
5
5
3
3
0
2
2
3 .
0
5
6
2
5
0
0
0
0
5
0
5
5
5
U
m
m
˚C
˚C
˚C
˚C
W
V
V
V
A
A
V
V
A
n
A
A
t i