2MBI150U4B-120 Fuji Electric holdings CO.,Ltd, 2MBI150U4B-120 Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/2/265/fuji_electric_holdings_co__ltd_sml.jpg)
2MBI150U4B-120
Manufacturer Part Number
2MBI150U4B-120
Description
Igbt Module
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI150U4B-120.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI150U4B-120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI150U4B-120
Quantity:
50
Part Number:
2MBI150U4B-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
100.0
400
300
200
100
10.0
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
Tj=25
2
2
o
o
C / chip
C
15V
3
3
Tj=125
20
12V
o
C
o
C
4
4
Cies
Cres
Coes
10V
8V
30
5
5
10
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
0
5
0
MS5F6059
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
200
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=150A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
400
15
o
o
C / chip
C / chip
3
VGE
VCE
15V
600
20
o
C
H04-004-03a
Ic=300A
Ic=150A
Ic=75A
9
4
10V
13
12V
8V
800
25
5