6MBI100U2B-060 Fuji Electric holdings CO.,Ltd, 6MBI100U2B-060 Datasheet - Page 3
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6MBI100U2B-060
Manufacturer Part Number
6MBI100U2B-060
Description
Igbt Module U Series 600v / 100a
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.6MBI100U2B-060.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
6MBI100U2B-060
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
6MBI100U2B-060
Quantity:
50
Part Number:
6MBI100U2B-060-50
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
IGBT Module
Characteristics (Representative)
250
200
150
100
250
200
150
100
100.0
50
50
10.0
0
0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
VGE=0V, f= 1MHz, Tj= 25°C
1
VGE=20V 15V
10
VGE=15V / chip
Tj= 25°C / chip
2
Coes
2
Tj=25°C
Cres
12V
3
20
Cies
Tj=125°C
3
4
10V
8V
30
5
4
500
400
300
200
100
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
250
200
150
100
10
Collector current vs. Collector-Emitter voltage (typ.)
0
50
8
6
4
2
0
0
0
5
0
100
Vcc=300V, Ic=100A, Tj= 25°C
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
1
10
Tj= 125°C / chip
200
Tj=25°C / chip
Gate charge : Qg [ nC ]
VGE
VGE=20V 15V
2
6MBI100U2B-060
300
15
VCE
3
400
12V
20
Ic=200A
Ic=100A
Ic= 50A
500
4
25
20
15
10
5
0
10V
8V
25
5