7MBP50RTB060 Fuji Electric holdings CO.,Ltd, 7MBP50RTB060 Datasheet
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7MBP50RTB060
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7MBP50RTB060 Summary of contents
Page 1
... IPM-R3 series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...
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... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy ...
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... Vin Ic /Vin Vge (Inside IPM) Fault (Inside IPM) /ALM Ic I ALM CT P VccU 20k DC VinU U 15V Sw1 GNDU V Vcc 20k W DC VinX 15V Sw2 N GND Earth Cooling Fin Figure 5. Noise Test Circuit on Vin(th) trr 90% 50% 90% ton Figure 1. Switching Time Waveform Definitions ...
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... Block diagram VccU 3 VinU 2 GNDU 1 VccV 6 VinV 5 GNDV 4 VccW 9 VinW 8 GNDW 7 Vcc 11 VinX 13 GND 10 VinY 14 VinZ 15 VinDB 12 R ALM Over heating protection ALM 16 circuit 1.5k Outline drawings, mm Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver IGBT-IPM Pre-driver include following functions ...
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... Characteristics Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency Tc=125° Switching frequency fsw (kHz) Under voltage vs. Junction temperature Junction temperature Tj ( Alarm hold time vs. Power supply voltage 3.0 2.5 2.0 1.5 1.0 0 ...
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... Main circuit characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=25°C(Chip 0.5 1 1.5 2 Collector-Emitter voltage V Collector current vs. Collector-Emitter voltage Tj=125°C(Chip 0.5 1 1.5 2 Collector-Emitter voltage V Forward current vs. Forward voltage (Chip) 100 80 60 ...
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... Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=25° Collector current I Reverse biased safe operating area < Vcc=15V, Tj 125°C = 150 100 100 200 300 400 Collector-Emitter voltage V Power derating for IGBT (per device) 150 100 ...
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... Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 10000 1000 100 Collector current Ic ( Reverse recovery characteristics trr, Irr, vs. I 100 Foeward current I 10000 1000 100 (A) F Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C ...
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... Dynamic brake characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=25°C (Terminal 0.5 1 1.5 Collector-Emitter voltage V Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width Pw (sec.) Power derating for IGBT (per device) 150 100 Case temperature 2 0 100 ...