7MBR35SB120 Fuji Electric holdings CO.,Ltd, 7MBR35SB120 Datasheet - Page 3

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7MBR35SB120

Manufacturer Part Number
7MBR35SB120
Description
Igbt Module S Series 1200v / 35a / Pim
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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IGBT Modules
Characteristics (Representative)
10000
1000
100
80
60
40
20
80
60
40
20
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
5
Collector current vs. Collector-Emitter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
10
VGE=0V, f= 1MHz, Tj= 25
VGE=15V (typ.)
Tj= 25
2
2
15
[ Inverter ]
VGE= 20V
[ Inverter ]
[ Inverter ]
o
C (typ.)
Tj= 25
20
3
3
15V
o
C
25
o
C
12V
Tj= 125
4
4
30
Cies
Coes
Cres
o
C
10V
8V
35
5
5
1000
800
600
400
200
80
60
40
20
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
1
100
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=35A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
Tj= 25
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
200
o
15
C (typ.)
o
C (typ.)
3
VGE= 20V
7MBR35SB120
o
C
300
20
Ic= 70A
Ic= 35A
Ic= 17.5A
4
15V
12V
10V
8V
400
25
5
25
20
15
10
5
0

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