SQM110N04-03 Vishay, SQM110N04-03 Datasheet
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SQM110N04-03
Related parts for SQM110N04-03
SQM110N04-03 Summary of contents
Page 1
... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC Work-in-Progress SQM110N04-03 Vishay Siliconix ® Power MOSFET LIMIT UNIT 40 V ± 20 110 110 A 110 440 211 375 W 3. 175 °C LIMIT UNIT 40 °C/W ...
Page 2
... SQM110N04-03 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... Capacitance Document Number: 68605 S-Pending-Rev. C, 12-Nov- °C, unless otherwise noted ° °C 125 °C 80 100 120 32 40 SQM110N04-03 Vishay Siliconix 250 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) ...
Page 4
... SQM110N04-03 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.8 D 1.5 1.2 0.9 0.6 0.3 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.05 0.04 0.03 Graph to be available upon completion 0.02 of testing 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted ...
Page 5
... R DS(on °C C Single Pulse 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area SQM110N04-03 Vishay Siliconix I ( ° ( 150 ° 0.0001 0.001 0.01 0.1 T (s) AV Avalanche Current vs. Time Graph to be available upon completion ...
Page 6
... SQM110N04-03 Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. 0.5 0.2 0.1 0.1 0.05 Duty Cycle = 0.02 0.01 0.001 Single Pulse 0.0001 - Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 10 1 0.1 0. Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www ...
Page 7
... Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Document Number: 68605 S-Pending-Rev. C, 12-Nov-08 100000 10000 Ambient 25 °C 1000 100 25 10 100 Single Pulse Avalanche Energy (Peak) vs (s) av SQM110N04-03 Vishay Siliconix AS(peak AS(peak AS(peak 100 125 150 T (°C) J(start) J(start) ...
Page 8
... SQM110N04-03 Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted A 10 Duty Cycle = 0.02 1 0.05 0.1 0.2 0.1 0.5 0. Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs ...
Page 9
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...