TSM7N65 Taiwan Semiconductor Company, Ltd. (TSC), TSM7N65 Datasheet

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TSM7N65

Manufacturer Part Number
TSM7N65
Description
650v N-channel Power Mosfet
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Absolute Maximum Rating
* Limited by maximum junction temperature
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Maximum Power Dissipation @ Tc = 25
Operating Junction Temperature
Storage Temperature Range
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Ordering Information
TSM7N65CZ C0
TSM7N65CI C0
Low R
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
ITO-220
Part No.
DS(ON)
1.2Ω (Max.)
Package
ITO-220
TO-220
TO-220
(Ta = 25
o
C
Pin Definition:
1. Gate
2. Drain
3. Source
50pcs / Tube
50pcs / Tube
o
C unless otherwise noted)
Packing
Ta = 25ºC
Ta = 100ºC
TO-220
ITO-220
1/9
PRODUCT SUMMARY
650V N-Channel Power MOSFET
V
Symbol
DS
650
T
V
V
E
I
I
P
T
I
DM
STG
AR
(V)
DS
GS
D
AS
D
J
N-Channel MOSFET
Block Diagram
1.2 @ V
R
-55 to +150
DS(on)
Limit
650
±30
216
125
150
6.4
3.8
22
30
GS
6
(Ω)
=10V
TSM7N65
Version: A09
I
D
Unit
3
(A)
mJ
ºC
o
W
V
V
A
A
A
A
C

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TSM7N65 Summary of contents

Page 1

... TO-220 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge ...

Page 2

... 300V 6A 10V 25V 0V 1.0MHz V = 10V 6A 300V 25Ω 0V 6A /dt = 100A/us F =500V DS 2/9 TSM7N65 Symbol Limit 1.0 RӨ JC 4.2 RӨ 62.5 JA Symbol Min Typ BV 650 -- DSS R -- 1.0 DS(ON) V 2.0 -- GS(TH DSS -- -- GSS ...

Page 3

... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 650V N-Channel Power MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/9 TSM7N65 Transfer Characteristics Gate Charge Version: A09 ...

Page 4

... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area - TO-220 Normalized Thermal Transient Impedance, Junction-to-Ambient 650V N-Channel Power MOSFET o ( unless otherwise noted) Maximum Safe Operating Area - ITO-220 4/9 TSM7N65 Threshold Voltage Version: A09 ...

Page 5

... Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E Test Circuit & Waveform AS 650V N-Channel Power MOSFET 5/9 TSM7N65 Version: A09 ...

Page 6

... Diode Reverse Recovery Time Test Circuit & Waveform 650V N-Channel Power MOSFET 6/9 TSM7N65 Version: A09 ...

Page 7

... Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 7/9 TSM7N65 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.04 10.07 0.395 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15 ...

Page 8

... Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 8/9 TSM7N65 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.000 10.500 0.394 3.740 3.910 0.147 2.440 2.940 0.096 - 6.350 - 0 ...

Page 9

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 650V N-Channel Power MOSFET Notice 9/9 TSM7N65 Version: A09 ...

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