SQ2308ES Vishay, SQ2308ES Datasheet - Page 3

• Manufacturer Part Number: SQ2308ES
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65353
S09-1700-Rev. A, 07-Sep-09
300
240
180
120
2.0
1.7
1.4
1.1
0.8
0.5
60
10
- 50
8
6
4
2
0
0
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
10
1
V
V
DS
T
C
DS
0
Output Characteristics
J
iss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
25
Capacitance
V
C
GS
2
oss
V
= 10 V, I
GS
50
30
= 10 V thru 5 V
V
3
D
GS
75
= 1.9 A
40
= 4.5 V, I
A
V
V
V
100
GS
GS
GS
= 25 °C, unless otherwise noted
4
= 4 V
= 3 V
= 2 V
50
D
125
= 1.7 A
150
60
5
0.1
10
10
8
6
4
2
0
4
3
2
1
0
1
0.0
0.0
0
I
D
= 1.9 A
Source Drain Diode Forward Voltage
0.2
0.7
1
V
V
Transfer Characteristics
SD
GS
Q
g
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
T
0.4
- Total Gate Charge (nC)
J
= 150 °C
V
Gate Charge
1.4
DS
2
T
= 30 V
C
0.6
Vishay Siliconix
T
= 25 °C
C
= 125 °C
2.1
T
SQ2308ES
3
C
= - 55 °C
0.8
V
www.vishay.com
DS
T
2.8
= 48 V
J
4
1.0
= 25 °C
3.5
1.2
5
3