SQ4840EY Vishay, SQ4840EY Datasheet

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SQ4840EY

Manufacturer Part Number
SQ4840EY
Description
N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQ4840EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SQ4840EY-T1-GE3
Manufacturer:
VISHAY
Quantity:
18 982
Part Number:
SQ4840EY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 68669
S-81565-Rev. A, 23-Oct-08
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
S
S
S
G
(A)
(V)
1
2
3
4
(Ω) at V
Top View
SO-8
GS
= 10 V
b
a
8
7
6
5
b
N-Channel 40 V (D-S) 175 °C MOSFET
D
D
D
D
G
N-Channel MOSFET
a
Single
0.009
40
10
C
D
S
= 25 °C, unless otherwise noted
PCB Mount
L = 0.1 mH
Automotive
T
T
T
T
C
C
C
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
c
SO-8
SQ4840EY-T1-GE3
FEATURES
• Halogen-free
• TrenchFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
- 55 to + 175
LIMIT
LIMIT
± 20
1.56
1.4
1.0
40
10
50
45
30
80
21
8
Vishay Siliconix
SQ4840EY
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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SQ4840EY Summary of contents

Page 1

... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQ4840EY Vishay Siliconix ® Power MOSFET LIMIT UNIT 40 V ± 1 1. 175 °C LIMIT UNIT 80 °C/W 21 www.vishay.com RoHS ...

Page 2

... SQ4840EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 68669 S-81565-Rev. A, 23-Oct- °C, unless otherwise noted thru 100 120 32 40 SQ4840EY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 0 ...

Page 4

... SQ4840EY Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0. 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted 100 125 150 ...

Page 5

... Graph to be available upon completion 10 of testing 1 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area SQ4840EY Vishay Siliconix Graph to be available upon completion of testing 0.0001 0.001 0.01 0.1 T (s) AV Avalanche Current vs. Time I = 250 µ ...

Page 6

... SQ4840EY Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 10 1 0.1 0. Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www ...

Page 7

... Single Pulse Avalanche Energy (Peak) vs. T Graph to be available upon completion of testing - (s) av SQ4840EY Vishay Siliconix Graph to be available upon completion of testing 50 75 100 125 T (°C) J(start) J(start) 10 100 1000 = 25 °C A www.vishay.com ...

Page 8

... SQ4840EY Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted 0.1 0. Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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