SQ4850EY Vishay, SQ4850EY Datasheet

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SQ4850EY

Manufacturer Part Number
SQ4850EY
Description
N-channel 60 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQ4850EY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SQ4850EY-T1-GE3
0
Part Number:
SQ4850EY-T1_GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SQ4850EY-T1_GE3
Quantity:
70 000
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 68878
S-Pending-Rev. A, 23-Oct-08
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
G
G
S
S
(A)
1
1
2
2
(V)
(Ω) at V
1
2
3
4
Top View
SO-8
GS
= 10 V
b
8
7
6
5
a
b
N-Channel 60 V (D-S) 175 °C MOSFET
D
D
D
D
1
1
2
2
G
N-Channel MOSFET
a
Single
0.022
6.0
60
C
D
S
= 25 °C, unless otherwise noted
Work-in-Progress
PCB Mount
L = 0.1 mH
Automotive
T
T
T
T
C
C
C
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
c
SO-8
SQ4850EY-T1-GE3
FEATURES
• Halogen-free
• TrenchFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
- 55 to + 175
LIMIT
LIMIT
± 20
1.7
1.2
5.0
60
60
40
11
15
90
20
-
Vishay Siliconix
SQ4850EY
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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SQ4850EY Summary of contents

Page 1

... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC Work-in-Progress SQ4850EY Vishay Siliconix ® Power MOSFET LIMIT UNIT 60 V ± 5 1 175 °C LIMIT UNIT 90 °C/W 20 www.vishay.com ...

Page 2

... SQ4850EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 68878 S-Pending-Rev. A, 23-Oct- °C, unless otherwise noted 2.0 2.5 3.0 80 100 120 SQ4850EY Vishay Siliconix 150 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.06 0.05 0. ...

Page 4

... SQ4850EY Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.8 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.06 0.05 0.04 0.03 0.02 0.01 0. Gate-to-Source Voltage ( On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 100 125 150 175 175 °C ...

Page 5

... Graph to be available upon completion 10 of testing 1 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area SQ4850EY Vishay Siliconix Graph to be available upon completion of testing 0.0001 0.001 0.01 0.1 T (s) AV Avalanche Current vs. Time I = 250 µ ...

Page 6

... SQ4850EY Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. 1000 100 10 1 0.1 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case ...

Page 7

... Single Pulse Avalanche Energy (Peak) vs. T Graph to be available upon completion of testing - (s) av SQ4850EY Vishay Siliconix Graph to be available upon completion of testing 50 75 100 125 T (°C) J(start) J(start) 10 100 1000 = 25 °C A www.vishay.com ...

Page 8

... SQ4850EY Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted 0.1 0. Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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