SQ7414EN Vishay, SQ7414EN Datasheet

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SQ7414EN

Manufacturer Part Number
SQ7414EN
Description
N-channel 60 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQ7414EN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 74489
S-Pending-Rev. B, 09-Feb-09
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
(A)
(V)
8
3.30 mm
D
(Ω) at V
7
D
6
D
PowerPAK 1212-8
Bottom View
5
GS
D
= 10 V
b
1
S
2
a
S
b
N-Channel 60 V (D-S) 175 °C MOSFET
3
S
3.30 mm
4
G
G
a
Single
0.025
5.6
N-Channel MOSFET
60
C
= 25 °C, unless otherwise noted
Work-in-Progress
PCB Mount
L = 0.1 mH
Automotive
T
T
T
D
S
T
C
C
C
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
c
PowerPAK1212-8
SQ7414EN-T1-E3
SQ7414EN-T1
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
AEC Q101 RELIABILITY
• Passed all AEC Q101 Reliability Testing
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
- 55 to + 175
LIMIT
LIMIT
± 20
1.5
0.8
2.4
60
30
18
19
81
5.6
4.4
1.3
Vishay Siliconix
SQ7414EN
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
A
RoHS*
COMPLIANT
Available
Pb-free
1

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SQ7414EN Summary of contents

Page 1

... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC Work-in-Progress SQ7414EN Vishay Siliconix Power MOSFET RoHS* COMPLIANT LIMIT UNIT 60 V ± 20 5.6 4 1 175 °C LIMIT UNIT 81 °C/W 2.4 www ...

Page 2

... SQ7414EN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 74489 S-Pending-Rev. B, 09-Feb- °C, unless otherwise noted 100 120 SQ7414EN Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SQ7414EN Vishay Siliconix TYPICAL CHARACTERISTICS 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.08 0.06 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted 100 125 150 ...

Page 5

... V - Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area SQ7414EN Vishay Siliconix 100 10 1 0.1 0.00001 0.0001 0.001 0.01 T (s) AV Avalanche Current vs. Time 0 250 µA D 0.2 0 100 T - Temperature (°C) ...

Page 6

... SQ7414EN Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 10 1 0.1 0. Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www ...

Page 7

... Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Document Number: 74489 S-Pending-Rev. B, 09-Feb-09 100000 10000 1000 100 25 10 100 Single Pulse Avalanche Energy (Peak) vs (s) av SQ7414EN Vishay Siliconix 50 75 100 125 150 T (°C) J(start) J(start) 10 100 1000 = 25 °C A www.vishay.com 7 ...

Page 8

... SQ7414EN Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted 0.1 0. Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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