SQD35N05-26L Vishay, SQD35N05-26L Datasheet

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SQD35N05-26L

Manufacturer Part Number
SQD35N05-26L
Description
N-channel 55 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 68839
S-Pending-Rev. A, 23-Oct-08
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
(A)
(V)
(Ω) at V
G
Top View
TO-252
GS
D
= 10 V
S
b
a
b
N-Channel 55 V (D-S) 175 °C MOSFET
G
N-Channel MOSFET
a
Single
0.020
55
35
C
D
S
= 25 °C, unless otherwise noted
Work-in-Progress
PCB Mount
L = 0.1 mH
T
Automotive
T
T
T
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
c
TO-252
SQD35N05-26L-GE3
FEATURES
• Halogen-free
• TrenchFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
- 55 to + 175
LIMIT
LIMIT
± 20
7.5
3.0
55
35
25
35
80
50
60
-
-
SQD35N05-26L
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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SQD35N05-26L Summary of contents

Page 1

... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC Work-in-Progress SQD35N05-26L Vishay Siliconix ® Power MOSFET LIMIT UNIT 55 V ± 7 175 °C LIMIT UNIT 60 °C/W 3.0 www.vishay.com ...

Page 2

... SQD35N05-26L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 68839 S-Pending-Rev. A, 23-Oct- °C, unless otherwise noted 0. °C C 0.03 25 °C 125 °C 0.02 0.01 0.00 80 100 44 55 SQD35N05-26L Vishay Siliconix 100 ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SQD35N05-26L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.05 0. 10.5 A 0.03 D 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 100 10 100 125 150 ...

Page 5

... R * DS(on) 100 °C C Single Pulse 0.1 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area SQD35N05-26L Vishay Siliconix 1000 100 Graph to be available upon completion 10 of testing 1 0.1 0.00001 0.0001 0.001 0.01 T (s) AV Avalanche Current vs. Time 0.8 0.6 0 250 µA D ...

Page 6

... SQD35N05-26L Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. 0.1 0.01 0.001 0.0001 - Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 10 1 0.1 0. Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www.vishay.com ...

Page 7

... Single Pulse Avalanche Energy (Peak) vs. T Graph to be available upon completion of testing - (s) av SQD35N05-26L Vishay Siliconix Graph to be available upon completion of testing 50 75 100 125 T (°C) J(start) J(start) 10 100 1000 = 25 °C A www.vishay.com ...

Page 8

... SQD35N05-26L Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted 0.1 0. Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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