SQD50N03-09 Vishay, SQD50N03-09 Datasheet - Page 3

• Manufacturer Part Number: SQD50N03-09
• Description: N-channel 30 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 68867
S-Pending-Rev. A, 23-Oct-08
2500
2000
1500
1000
100
500
80
60
40
20
50
40
30
20
10
0
0
0
0
0
0
V
GS
10
2
6
= 10 thru 4 V
V
V
DS
Output Characteristics
DS
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
20
12
4
C
C
C
oss
iss
rss
30
18
6
3 V
T
C
A
40
= - 55 °C
24
8
= 25 °C, unless otherwise noted
125 °C
25 °C
10
50
30
0.015
0.012
0.009
0.006
0.003
0.000
50
40
30
20
10
10
8
6
4
2
0
0
0.0
0
0
V
I
D
0.5
DS
5
= 15 A
= 15 V
On-Resistance vs. Drain Current
10
V
1.0
10
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
V
- Total Gate Charge (nC)
I
GS
D
1.5
15
- Drain Current (A)
Gate Charge
20
= 4.5 V
T
25 °C
SQD50N03-09
C
2.0
20
= 125 °C
Vishay Siliconix
30
2.5
25
V
www.vishay.com
GS
3.0
30
= 10 V
40
- 55 °C
3.5
35
4.0
50
40
3