SQD50P06-15L Vishay, SQD50P06-15L Datasheet
SQD50P06-15L
Available stocks
Related parts for SQD50P06-15L
SQD50P06-15L Summary of contents
Page 1
... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD50P06-15L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT - 60 V ± 135 mJ 130 175 °C LIMIT UNIT 50 °C/W 1 ...
Page 2
... SQD50P06-15L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 69098 S09-0800-Rev. A, 11-May- °C, unless otherwise noted °C 125 ° SQD50P06-15L Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) ...
Page 4
... SQD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.8 D 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Case Temperature (°C) C Maximum Drain Current vs. Ambient Temperature www ...
Page 5
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69098. Document Number: 69098 S09-0800-Rev. A, 11-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD50P06-15L Vishay Siliconix - www.vishay.com 5 ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...