SQD45N05 Vishay, SQD45N05 Datasheet - Page 5

• Manufacturer Part Number: SQD45N05
• Description: Automotive N-channel 50 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

THERMAL RATINGS T
Note
The characteristics shown in the graph.
Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park”
indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from
empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz.
copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64700.
Document Number: 64700
S09-1214-Rev. A, 29-Jun-09
0.01
0.1
50
40
30
20
10
2
1
0
Maximum Drain Current vs. Ambient Temperature
0
10
Duty Cycle = 0.5
0.1
0.2
-4
25
Single Pulse
0.05
T
50
C
- Case Temperature (°C)
0.02
75
10
A
-3
= 25 °C, unless otherwise noted
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
10
-2
Square Wave Pulse Duration (s)
175
10
-1
200
100
0.1
10
1
0.1
by R
* V
Limited
GS
DS(on)*
> minimum V
V
DS
T
Single Pulse
C
- Drain-to-Source Voltage (V)
Safe Operating Area
= 25 °C
1
1
GS
at which R
SQD45N05-20L
Vishay Siliconix
10
DS(on)
is specified
10
www.vishay.com
100 µs
10 ms
1 ms
100 ms
DC, 1 s
100
30
5