SQD50N06-07L Vishay, SQD50N06-07L Datasheet
SQD50N06-07L
Related parts for SQD50N06-07L
SQD50N06-07L Summary of contents
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... 0 ° stg SYMBOL c PCB Mount R thJA R thJC SQD50N06-07L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 60 V ± 100 125 136 175 °C LIMIT UNIT 50 °C/W 1 ...
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... SQD50N06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... DS Capacitance Document Number: 69099 S09-1414-Rev. A, 03-Aug- °C, unless otherwise noted ° °C 125 ° SQD50N06-07L Vishay Siliconix 100 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQD50N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Ambient Temperature (°C) A Maximum Drain Current vs. Ambient Temperature www ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69099. Document Number: 69099 S09-1414-Rev. A, 03-Aug- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD50N06-07L Vishay Siliconix 1 10 100 www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...