SQD19P06-60L Vishay, SQD19P06-60L Datasheet
SQD19P06-60L
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SQD19P06-60L Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD19P06-60L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT - 60 V ± 2 175 °C LIMIT UNIT 55 °C/W 3.25 www.vishay.com ...
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... SQD19P06-60L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Capacitance Document Number: 65158 S09-1325-Rev. A, 13-Jul- °C, unless otherwise noted °C 25 °C 125 ° SQD19P06-60L Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQD19P06-60L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.9 1.6 1.3 1.0 0.7 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Case Temperature (°C) C Maximum Drain Current vs. Ambient Temperature www.vishay.com ° ...
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... Document Number: 65158 S09-1325-Rev. A, 13-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD19P06-60L Vishay Siliconix 100 1 10 www.vishay.com 100 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...