SQD50N02-04 Vishay, SQD50N02-04 Datasheet
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SQD50N02-04
Related parts for SQD50N02-04
SQD50N02-04 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD50N02-04 Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 20 V ± 8.3 100 8.3 W 136 - 175 °C LIMIT UNIT 50 °C/W 1 ...
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... SQD50N02-04 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Document Number: 64701 S09-1401-Rev. A, 27-Jul- °C, unless otherwise noted 2.0 2.5 3 ° ° 125 ° SQD50N02-04 Vishay Siliconix 200 150 100 50 25 ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.010 ...
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... SQD50N02-04 Vishay Siliconix TYPICAL CHARACTERISTICS T 1.8 1 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com °C, unless otherwise noted A 100 10 1 100 125 150 175 150 ° ° 0.3 0.6 0.9 1 Source-to-Drain Voltage (V) SD ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64701. Document Number: 64701 S09-1401-Rev. A, 27-Jul-09 1000 100 10 1 0.1 0.0 125 150 175 - Square Wave Pulse Duration (s) SQD50N02-04 Vishay Siliconix Limited by R DS(on)* 10 µs 100 µ 100 100 s, DC Single Pulse °C A 0.1 1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...