SQD25N06-22L Vishay, SQD25N06-22L Datasheet
SQD25N06-22L
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SQD25N06-22L Summary of contents
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... 0 ° stg SYMBOL c PCB Mount R thJA R thJC SQD25N06-22L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 60 V ± 31. 175 °C LIMIT UNIT 60 °C/W 3 ...
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... SQD25N06-22L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 65360 S09-1722-Rev. A, 14-Sep- °C, unless otherwise noted 4 100 125 150 175 SQD25N06-22L Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0 ...
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... SQD25N06-22L Vishay Siliconix TYPICAL CHARACTERISTICS T 100 T = 150 ° 0.1 0.01 0.001 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage THERMAL RATINGS °C, unless otherwise noted A www.vishay.com °C, unless otherwise noted A 0.25 0.20 0. °C J 0.10 0.05 0.8 1.0 1.2 0.6 0 0 250 µ 0 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65360. Document Number: 65360 S09-1722-Rev. A, 14-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD25N06-22L Vishay Siliconix - www.vishay.com 3 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...