SQJ461EP Vishay, SQJ461EP Datasheet - Page 3

• Manufacturer Part Number: SQJ461EP
• Description: P-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65541
S09-2183-Rev. A, 26-Oct-09
2.0
1.7
1.4
1.1
0.8
0.5
75
60
45
30
15
50
40
30
20
10
0
0
- 50
0
0
T
On-Resistance vs. Junction Temperature
C
I
- 25
D
= 25 °C
= 14.4 A
10
V
2
V
T
GS
0
C
DS
T
Output Characteristics
J
= 10 V thru 4 V
= - 55 °C
Transconductance
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
I
20
25
D
- Drain Current (A)
4
V
50
GS
30
= 10 V
75
6
100
40
V
A
GS
T
125
= 25 °C, unless otherwise noted
C
= 3 V
8
= 125 °C
50
150
175
10
60
0.001
0.05
0.04
0.03
0.02
0.01
0.00
0.01
100
60
50
40
30
20
10
0.1
10
0
1
0.0
0
0
Source Drain Diode Forward Voltage
0.2
10
On-Resistance vs. Drain Current
1
T
V
V
J
SD
GS
V
Transfer Characteristics
V
= 150 °C
GS
GS
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
0.4
T
= 10 V
20
I
= 4.5 V
D
C
= 125 °C
- Drain Current (A)
2
T
C
0.6
= 25 °C
30
Vishay Siliconix
3
T
J
0.8
40
T
= 25 °C
SQJ461EP
C
= - 55 °C
4
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1.0
50
1.2
60
5
3