SQJ850EP Vishay, SQJ850EP Datasheet - Page 3

• Manufacturer Part Number: SQJ850EP
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65280
S09-1621-Rev. A, 31-Aug-09
40
32
24
16
2.5
2.1
1.7
1.3
0.9
0.5
50
40
30
20
10
8
0
0
0
- 50 - 25
0
V
I
On-Resistance vs. Junction Temperature
D
GS
= 10.3 A
V
= 10 V
GS
5
2
V
0
T
= 10 V thru 5 V
DS
Output Characteristics
J
- Junction Temperature (°C)
4 V
- Drain-to-Source Voltage (V)
Transconductance
I
25
D
- Drain Current (A)
10
4
50
75
15
6
100
T
C
A
= - 55 °C
125 °C
125
25 °C
20
= 25 °C, unless otherwise noted
8
150
25
175
10
0.001
0.10
0.08
0.06
0.04
0.02
0.00
0.01
100
0.1
40
32
24
16
10
8
0
1
0.0
0
0
On-Resistance vs. Drain Current
T
J
0.2
= 150 °C
1
Transfer Characteristics
8
V
V
Source Drain Diode Forward Voltage
GS
SD
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
0.4
I
25 °C
2
D
- Drain Current (A)
16
125 °C
0.6
V
3
GS
24
Vishay Siliconix
= 4.5 V
T
J
0.8
T
4
= 25 °C
C
SQJ850EP
V
= - 55 °C
GS
32
= 10 V
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1.0
5
1.2
40
6
3