SQJ964EP Vishay, SQJ964EP Datasheet - Page 2

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SQJ964EP

Manufacturer Part Number
SQJ964EP
Description
Automotive Dual N-channel 60 V D-s 175 °c Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SQJ964EP-T1-GE3
Quantity:
70 000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2419-Rev. B, 19-Dec-11
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
c
b
c
a
www.vishay.com
c
c
c
c
c
a
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
C
= 25 °C, unless otherwise noted)
a
SYMBOL
R
V
I
t
t
C
I
I
C
V
D(on)
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
g
R
SM
t
oss
t
DS
rss
SD
iss
gd
fs
gs
r
f
g
g
b
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
≅ 1 A, V
2
V
V
V
V
V
DS
DS
TEST CONDITIONS
GS
DD
DS
I
F
= V
= 0 V, V
= 2.9 A, V
= 0, I
= 15 V, I
= 20 V, R
GEN
f = 1 MHz
GS
V
V
I
I
V
V
D
D
DS
DS
, I
= 10 V, R
D
DS
DS
= 9.6 A, T
= 9.6 A, T
D
= - 250 μA
GS
= 60 V, T
= 60 V, T
= 30 V, f = 1 MHz
= - 250 μA
= 30 V, I
D
V
L
GS
= ± 20 V
V
I
= 9.6 A
D
DS
= 20 Ω
www.vishay.com/doc?91000
DS
= 9.6 A
= 0
= 60 V
g
≥ 5 V
= 6.0 Ω
J
J
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
= 9.6 A
MIN.
3.4
60
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Siliconix
Document Number: 65167
0.020
0.033
0.040
TYP.
2360
12.5
155
3.8
0.8
30
73
38
17
11
37
10
8
2
-
-
-
-
-
-
-
SQJ964EP
MAX.
± 100
0.028
0.046
0.055
2900
150
190
4.5
1.1
50
90
57
25
16
45
15
32
1
3
-
-
-
-
-
UNIT
nA
μA
pF
nC
ns
Ω
Ω
V
A
S
A
V

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