SQJ410EP Vishay, SQJ410EP Datasheet - Page 4

• Manufacturer Part Number: SQJ410EP
• Description: Automotive N-channel 30 V D-s 175 °c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS (T
S11-2288-Rev. B, 28-Nov-11
0.025
0.020
0.015
0.010
0.005
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
2.0
1.7
1.4
1.1
0.8
0.5
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
I
D
= 15 A
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2
0
V
T
J
- Junction Temperature (°C)
- ate-to- ource Voltage (V)
25
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4
50
75
6
V
100
= 10 V
T
T
V
40
38
36
34
32
30
J
A
125
J
Drain Source Breakdown vs. Junction Temperature
= 150 °C
- 50
= 25 °C
= 25 °C, unless otherwise noted)
8
= 4.5 V
150
I
- 25
D
= 1 mA
175
10
0
T
J
- Junction Temperature (°C)
25
50
4
75
100
0.001
- 1.5
- 0.3
- 0.7
- 1.1
0.01
100
0.1
0.5
0.1
10
125
1
- 50
0
www.vishay.com/doc?91000
150
- 25
Source Drain Diode Forward Voltage
0.2
175
T
V
J
0
= 150 °C
D
- ource-to-Drain Voltage (V)
Threshold Voltage
0.4
25
T
J
- Temperature (°C)
50
0.6
75
T
I
J
D
Vishay Siliconix
0.8
100
= 25 °C
Document Number: 67003
= 250 μA
SQJ410EP
125
1.0
I
D
= 5 mA
150
1.2
175