SQR50N06-07L Vishay, SQR50N06-07L Datasheet

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SQR50N06-07L

Manufacturer Part Number
SQR50N06-07L
Description
Automotive N-channel 60 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SQR50N06-07L-GE3
Manufacturer:
FSC
Quantity:
9 200
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing
Document Number: 69066
S09-2594-Rev. A, 14-Dec-09
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
(A)
Reverse Lead DPAK
(V)
(Ω) at V
(Ω) at V
G
TO-252
Top View
D
GS
GS
S
= 10 V
= 4.5 V
b
Drain Connected to Tab
a
b
N-Channel 60 V (D-S) 175 °C MOSFET
G
N-Channel MOSFET
a
0.0076
Single
0.009
C
60
50
= 25 °C, unless otherwise noted
D
S
PCB Mount
L = 0.1 mH
T
Automotive
T
T
C
C
C
= 100 °C
= 25 °C
= 25 °C
c
TO-252 Reverse Lead DPAK
SQR50N06-07L-GE3
FEATURES
• Reverse Lead DPAK for Top Side Cooling
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
± 20
100
125
136
1.1
60
50
50
50
50
50
SQR50N06-07L
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
A
V
1

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SQR50N06-07L Summary of contents

Page 1

... 0 ° stg SYMBOL c PCB Mount R thJA R thJC SQR50N06-07L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 60 V ± 100 125 136 175 °C LIMIT UNIT 50 °C/W 1 ...

Page 2

... SQR50N06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... DS Capacitance Document Number: 69066 S09-2594-Rev. A, 14-Dec- °C, unless otherwise noted ° °C 125 ° SQR50N06-07L Vishay Siliconix 100 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SQR50N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Ambient Temperature (°C) A Maximum Drain Current vs. Ambient Temperature www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69066. Document Number: 69066 S09-2594-Rev. A, 14-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQR50N06-07L Vishay Siliconix 1 10 100 www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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