SQS405EN Vishay, SQS405EN Datasheet
SQS405EN
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SQS405EN Summary of contents
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... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQS405EN Vishay Siliconix Power MOSFET d Product Requirements at: LIMIT UNIT - 12 V ± 175 °C 260 LIMIT UNIT 35 °C/W 3 ...
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... SQS405EN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... S10-0021-Rev. A, 18-Jan- °C, unless otherwise noted 0.0 0.08 0.06 0.04 0.02 0. 100 10 1 0.1 0.01 0.001 125 150 175 0.0 SQS405EN Vishay Siliconix ° 125 ° ° 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQS405EN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.10 0.08 0.06 0. 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage - 13.0 - 13.5 - 14.0 - 14.5 - 15.0 - 15.5 - 16.0 www.vishay.com °C, unless otherwise noted A 0.4 0.3 0.2 0.1 0.0 - 0 100 125 T - Junction Temperature (°C) J Drain Source Breakdown vs. Junction Temperature I = 250 μ ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65704. Document Number: 65704 S10-0021-Rev. A, 18-Jan- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) SQS405EN Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...