VND670 STMicroelectronics, VND670 Datasheet - Page 5

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VND670

Manufacturer Part Number
VND670
Description
Dual High Side Switch With Dual Power Mos Gate Driver Bridge Configuration
Manufacturer
STMicroelectronics
Datasheet

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WAVEFORMS AND TRUTH TABLE
TRUTH TABLE IN NORMAL OPERATING CONDITIONS
In normal operating conditions the DIAG
pulled high.
PWM pin usage:
In all cases, a “0” on the PWM pin will turn-off both GATE
GATE
TYPICAL APPLICATION CIRCUIT FOR DC TO 10KHz PWM OPERATION
(*) Reverse battery protection:
- series relay in V
- series fuse in V
Layout hints:
The connection between GND pin of the VN670SP and the Power MOSFET SOURCE connections should be kept short enough to ensure
that the dynamic difference between these two points never exceed 1V for the bridge to operate properly.
IN
X
X
X
1
1
0
0
1
0
B
A
turn on again depending on the input pin state.
R
R
R
1K
1K
1K
prot
prot
prot
DIAG
CC
CC
IN
PWM
X
X
X
1
0
1
0
1
0
A
B
line with antiparallel diode between ground and V
/EN
IN
line: R
A
R1
A
+5V
External Power Mos A
gnd
DIAG
=0 Ohms
GATE
A
1
1
1
1
0
1
1
0
0
/EN
A
A
X
DIAG
/EN
OUT
X
A
B
1
1
1
1
0
0
0
1
1
pin is considered as an input pin by the device. This pin must be externally
/EN
VND670SP
B
DOWN
OUT
A
UP
M
H
H
H
and GATE
L
L
L
L
L
L
CC
A
V
GND
R
CC
: R
gnd
gnd
(*)
=10 Ohms.
OUT
B
H
H
H
L
L
L
L
L
L
outputs. When PWM rises back to “1”, GATE
B
OUT
B
External Power Mos B
GATE
L
H
H
H
L
L
L
L
L
GATE
A
B
GATE
+5V
L
H
H
H
L
L
L
L
L
R1
B
DIAG
IN
B
Brake to V
Clockwise
Counter cw
Brake to GND
Stand by
HS
MOS
HS
MOS
B
/EN
VND670SP
Comment
A
B
B
R
R
only
only
A
B
1K
prot
prot
1K
only
only
CC
5/14
A
or

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