RT3CLLM ISAHAYA ELECTRONICS CORPORRATION, RT3CLLM Datasheet - Page 2

• Manufacturer Part Number: RT3CLLM
• Description: Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
V
I
I
h
h
V
f
C
NF
T
CBO
EBO
* : It shows h
FE
FE
Symbol
(BR)CEO
CE(sat)
ob
*
FE
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
classification in right table.
Parameter
ISAHAYA ELECTRONICS CORPORATION
I
V
V
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
CE
=100μA,R
=100mA,I
=6V,I
=6V,I
=6V,I
=6V,I
=6V,I
=6V,I
=50V,I
C
C
C
E
E
E
=0
=1mA
=0.1mA
=-10mA
=0,f=1MH
=-0.1mA,f=1kH
E
B
Test conditions
=0
BE
=10mA
=∞
Z
Z
Item
hFE
,R
G
=2kΩ
For Low Frequency Amplify Application
150～300
E
Min
150
50
90
Silicon Npn Epitaxial Type
-
-
-
-
-
-
RT3CLLM
Compound Transistor
Limits
250～500
Typ
200
2.5
-
-
-
-
-
-
-
F
Max
800
0.1
0.1
0.3
15
-
-
-
-
400～800
G
MH
Unit
μA
μA
pF
dB
V
V
-
-
Z