VEMI65AB-HCI Vishay, VEMI65AB-HCI Datasheet - Page 3
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VEMI65AB-HCI
Manufacturer Part Number
VEMI65AB-HCI
Description
6-channel Emi-filter With Esd-protection
Manufacturer
Vishay
Datasheet
1.VEMI65AB-HCI.pdf
(7 pages)
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Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VEMI65AB-HCI
All inputs (pin 1, 2, 3, 4, 5 and 6) to ground (pin 13)
Typical Characteristics
T
Document Number 81717
Rev. 1.1, 26-Feb-08
amb
Filter channels
Reverse stand off voltage
Reverse current
Reverse break down
voltage
Pos. clamping voltage
Neg. clamping voltage
Input capacitance
ESD-clamping voltage
Line resistance
Cut-off frequency
= 25 °C, unless otherwise specified
20557
Parameter
Figure 1. ESD Discharge Current Wave Form
120 %
100 %
80 %
60 %
40 %
20 %
53 %
27 %
0 %
acc. IEC 61000-4-2 (330 Ω/150 pF)
- 10 0 10 20 30 40 50 60 70 80 90 100
rise time = 0.7 ns to 1 ns
Time (ns)
at I
measured at the output; acc. IEC 61000-4-5
measured at the output; acc. IEC 61000-4-5
number of channels which can be protected
at I
at ± 18 kV ESD-pulse acc. IEC 61000-4-2
at I
at I
For technical support, please contact: EMI-filter@vishay.com
PP
V
PP
measured between input and output;
IN
PP
at the output; acc. IEC 61000-4-5
PP
at the output; acc. IEC 61000-4-5
= - 1 A applied at the input, measured
= 1 A applied at the input, measured
= 0 V; measured in a 50 Ω system
= I
= I
at V
Test conditions/remarks
PPM
at V
PPM
R
= - 4 A applied at the input,
R
at V
= 4 A applied at the input,
at I
= 2.5 V; f = 1 MHz
at I
= 0 V; f = 1 MHz
I
S
R
R
R
= 10 mA
= 1 mA
= V
= 1 µA
RWM
Figure 2. 8/20 µs Peak Pulse Current Wave Form
20548
N
Symbol
100 %
V
V
V
V
V
V
channel
80 %
60 %
40 %
20 %
V
f
CESD
RWM
C-out
C-out
C-out
C-out
C
C
R
3dB
0 %
I
BR
R
in
in
S
0
- 1.2
Min.
acc. IEC 61000-4-5
- 1
90
10
5
6
VEMI65AB-HCI
Vishay Semiconductors
Time (µs)
8 µs to 100 %
20
0.25
Typ.
100
130
7.5
40
24
20 µs to 50 %
30
Max.
110
45
28
6
1
7
8
www.vishay.com
40
channel
MHz
Unit
µA
pF
pF
V
V
V
V
V
V
V
Ω
3